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STTH3R04Q Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STTH3R04Q
Descrição Electrónicos  Ultrafast recovery diode
PDF  10 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH3R04Q Folha de dados(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH3R04
2/10
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.9 x IF(AV) + 0.083 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
400
V
IF(AV)
Average forward current,
δ = 0.5
DO-15
Tlead = 70 °C
3.0
A
DO-201AD
Tlead = 80 °C
SMB
Tlead = 70 °C
SMC
Tlead = 100 °C
IFSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
60
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature(1)
1.
On infinite heatsink with 10 mm lead length
175
°C
Table 3.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to lead
Lead length = 10 mm
on infinite heatsink
DO-15
25
°C/W
DO-201AD
22
Rth(j-l)
Junction to lead
SMB
25
SMC
17
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2 %
Reverse leakage current
Tj = 25 °C
VR = VRRM
5
µA
Tj = 125 °C
5
50
VF
(2)
2.
Pulse test: tp = 380 µs, δ < 2 %
Forward voltage drop
Tj = 25 °C
IF = 3.0 A
1.5
V
Tj = 100 °C
1.0
1.25
Tj = 150 °C
0.9
1.15



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