STW10NA50 datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

td(on)

Turn-on Time

Rise Time

VDD =250 V

ID =5 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 3)

(di/dt) on

Turn-on Current Slope

VDD =400 V

ID =10 A

RG =47

Ω

VGS =10 V

(see test circuit, figure 5)

200

µs

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 400 V

ID =10 A

VGS =10 V

SWITCHING OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

tr(Voff)

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =400 V

ID =10 A

RG =4.7

Ω VGS =10 V

(see test circuit, figure 5)

SOURCE DRAIN DIODE

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

ISD

I SDM(

•)

Source-drain Current

(pulsed)

9.6

VSD (

∗)

Forward On Volt age

ISD =10 A

VGS =0

1.6

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 10 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

(see test circuit, figure 5)

560

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Areas for TO-218 and TO-247

Safe Operating Areas for ISOWATT218

STH10NA50/FI STW10NA50

3/11

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