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MJD31CT4 Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças MJD31CT4
Descrição Electrónicos  Low voltage NPN power transistor
PDF  9 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MJD31CT4 Folha de dados(HTML) 3 Page - STMicroelectronics

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MJD31CT4
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
2.1
Electrical characteristic (curves)
Table 2.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
VCE =100V
20
µA
ICEO
Collector cut-off current
(IB = 0)
VCB =60V
50
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB =5V
0.1
mA
VCEO(sus) (1)
Collector-emitter
sustaining voltage
(IB = 0)
IC =30mA
100
V
VCE(sat) (1) Collector-emitter
saturation voltage
IC =3A
_
IB =375mA
1.2
V
VBE(on) (1) Base-emitter on voltage
IC =3A
_
VCE=4V
1.8
V
hFE
DC current gain
IC =1A
_ _ VCE =4V
IC = 3A
VCE =4V
25
10
50
Figure 1.
Safe operating area
Figure 2.
Derating curve



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