SFS9926 datasheet(1/6 Pages) SEMIWELL

Nome de Peças	SFS9926

Descrição Electrónicos	Dual N-Channel MOSFET

PDF	6 Pages

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Fabricante Electrônico	SEMIWELL [SemiWell Semiconductor]

Página de início	http://www.semiwellsemi.co.kr

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1 / 6 page

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VDSS

Drain to Source Voltage

20

V

ID

Continuous Drain Current(@TA = 25°C)

6.5

A

IDM

Drain Current Pulsed

(Note 1)

30

A

VGS

Gate to Source Voltage

±12

V

PD

Total Power Dissipation Single Operation (TA=25°C)

2.0

W

Total Power Dissipation Single Operation (TA=70°C)

1.28

W

TSTG, TJ

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

°C

TL

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 4)

-

62.5

°C/W

SFS9926

December, 2002. Rev. 0.

1/6

Features

■

Low RDS(on) (0.030Ω )@VGS=4.5V

Low RDS(on) (0.043Ω )@VGS=2.5V

■

Gate Charge (Typical 14nC)

■

Improved dv/dt Capability

■

Maximum Junction Temperature Range (150°C)

■

Available in Tape and Reel

General Description

This Power MOSFET is produced using SemiWell’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a low

gate charge with superior switching performance, and rugged

avalanche characteristics. This Power MOSFET is well suited

for Battery protection circuit, Load switch and other power

management application.

SemiWell Semiconductor

Dual N-Channel MOSFET

8-SOIC

Symbol

G1

S1

S2

G2

D1

D2

D1

D2

D1

D2

S1

G1

G2

S2

1

2

3

4

5

6

7

8

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