ST72101G2 datasheet(80/84 Pages) STMICROELECTRONICS

80 / 84 page

80/84

ST72101/ST72212/ST72213

7 GENERAL INFORMATION

7.1 EPROM ERASURE

EPROM version devices are erased by exposure

to high intensity UV light admitted through the

transparent window. This exposure discharges the

floating gate to its initial state through induced

photo current.

It is recommended that the EPROM devices be

kept out of direct sunlight, since the UV content of

sunlight can be sufficient to cause functional fail-

ure. Extended exposure to room level fluorescent

lighting may also cause erasure.

An opaque coating (paint, tape, label, etc...)

should be placed over the package window if the

product is to be operated under these lighting con-

ditions. Covering the window also reduces IDD in

power-saving modes due to photo-diode leakage

currents.

An Ultraviolet source of wave length 2537 Å yield-

ing a total integrated dosage of 15 Watt-sec/cm2 is

required to erase the device. It will be erased in 15

to 20 minutes if such a UV lamp with a 12mW/cm2

power rating is placed 1 inch from the device win-

dow without any interposed filters.

7.2 PACKAGE MECHANICAL DATA

Figure 51. 28-Pin Small Outline Package, 300-mil Width

Dim.

inches

Min

Typ

Max

Min

Typ

Max

2.35

2.65 0.0926

0.1043

0.10

0.30 0.0040

0.0118

0.33

0.51

0.013

0.020

0.23

0.32 0.0091

0.0125

17.70

18.10 0.6969

0.7125

7.40

7.60 0.2914

0.2992

1.27

0.0500

10.01

10.64 0.394

0.419

0.25

0.74

0.010

0.029

0.41

1.27

0.016

0.050

0.10

0.004

Number of Pins

N28

SO28

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