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SMTPB62 Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças SMTPB62
Descrição Electrónicos  TRISILTM
PDF  5 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SMTPB62 Folha de dados(HTML) 2 Page - STMicroelectronics

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Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads
20
°C/W
Rth (j-a)
Junction to ambient.
On printed circuit with standard footprint dimensions.
75
°C/W
THERMAL RESISTANCES
Symbol
Parameter
VRM
Stand-off voltage
IRM
Leakage current at stand-off voltage
VR
ContinuousReverse voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
ELECTRICAL CHARACTERISTICS (Tamb =25
°C)
Type
Marking
IRM @VRM
IR @VR
VBO @IBO
IH
C
max.
max.
note1
max.
note2
max.
min.
note3
typ.
note4
Laser
µAV
µAV
V
mA
mA
pF
SMTPB62
SMTPB68
SMTPB120
SMTPB200
SMTPB270
W07
W11
W21
W31
W43
2
2
2
2
2
56
61
108
180
243
50
50
50
50
50
62
68
120
200
270
82
90
160
267
360
800
800
800
800
800
150
150
150
150
150
160
160
140
130
120
All parameters tested at 25
°C, except where indicated.
Symbol
Parameter
Value
Unit
P
Power dissipation
Tlead =50
°C5
W
IPP
Peak pulse current
10/1000
µs
8/20
µs
2/10
µs
100
250
500
A
ITSM
Non repetitive surge peak on-state
current
tp = 20 ms
50
A
dV/dt
Critical rate of rise of off-state voltage
VRM
5KV/
µs
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to + 150
+ 150
°C
°C
TL
Maximum lead temperature for soldering during 10 s.
+ 260
°C
ABSOLUTE MAXIMUM RATINGS (Tamb =25
°C)
Note 1:
IR measured at VR guarantees VBRmin ≥ VR
Note 2:
Measured at 50 Hz (1 cycle) - See test circuit 1.
Note 3:
See test circuit 2.
Note 4:
VR = 1V, F = 1MHz. Refer to fig 3 for C versus VR.
SMTPBxxx
2/5



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