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C2M0045170D Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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C2M0045170D Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISCF8140 eq C2M0045170D SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · Low switching capacitances · Latch-up immune · 1700V blocking voltage & low Rds(on) APPLICATIONS · Solar power inverters · High voltage industrial DC-DC · UPS Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1700 V VGS OP Operational Gate-Source Voltage-Static -5/+20 V ID Drain Current-Continuous 75 A Drain Current-Continuous@Tc=100℃ 48 A IDM Drain Current-Single Pluse tPmax limited by Tjmax 160 A PD Total Dissipation 338 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.37 ℃ /W |
Nº de peça semelhante - C2M0045170D |
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Descrição semelhante - C2M0045170D |
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