Silicon NPN Power Transistor

BFR520

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA, IE= 0

20

--

--

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA, IB= 0

12

--

--

V

ICBO

Collector Cutoff Current

VCB= 10V,IE=0

--

--

0.1

uA

IEBO

Emitter Cutoff Current

VEB=1V,IC=0

--

--

0.1

uA

hFE

DC Current Gain

IC= 20mA, VCE= 6V

90

--

250

--

fT

Transition Frequency

VCE=6V,IC=20mA,f=1GHz

--

8

--

GHz

Cre

Reverse Transfer Capacitance

VCB=10V,IE=0mA,f=1MHz

--

0.65

--

pF

|S21e|2

Insertion Power Gain

VCE=6V,IC=20mA,f=0.9GHz

--

12

--

dB

NF

Noise Figure

VCE=6V,IC=5mA,f=0.9GHz

--

1.6

--

dB

PACKAGE OUTLINE (UNIT: MM):

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have