XPD57030 datasheet(1/4 Pages) STMICROELECTRONICS

Nome de Peças	XPD57030

Descrição Electrónicos	RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PDF	4 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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TARGET DATA

May 2000

PD57030

PD57030S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 30 W with 13 dB gain @ 945 MHz / 28V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD57030 is a common source N-Channel, en-

hancement-mode, lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28V in common source mode at frequencies of

up to 1GHz. PD57030 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS tech-

nology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. PD57030’s su-

perior linearity performance makes it an ideal so-

lution for base station applications.

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

PowerSO-10RF

(Formed Lead)

ORDER CODE

BRANDING

PowerSO-10RF

(Straight Lead)

ORDER CODE

BRANDING

PD57030

XPD57030

PD57030S

XPD57030S

ABSOLUTE MAXIMUM RATINGS(TCASE =25 0C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current

4

A

PDISS

Power Dissipation (@ Tc = 70 0C)

52.8

W

Tj

Max. Operating Junction Temperature

165

0C

TSTG

Storage Temperature

-65 to 175

0C

THERMAL DATA (TCASE =70

0C)

Rth(j-c)

Junction-Case Thermal Resistance

1.8

0C/W

Nº de peça semelhante - XPD57030

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XPD57030 Folha de dados(PDF) 1 Page - STMicroelectronics

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