AP30G120SW datasheet(3/3 Pages) AOSMD

Nome de Peças	AP30G120SW

Descrição Electrónicos	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	AOSMD [Alpha & Omega Semiconductors]

Página de início	http://www.aosmd.com

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Fig 7. Turn-off SOA

Fig 8. Effective Transient Thermal

Impedance

Fig 9. Saturation Voltage vs. VGE

Fig 10. Saturation Voltage vs. VGE

Fig11. Forward Characteristic of

Fig 12. Gate Charge Characterisitics

Diode

3/3

AP30G120SW

20406080

Q G , Gate Charge (nC)

I C =3 0A

V CC =200V

V CC =300V

V CC =500V

V GE , Gate-Emitter Voltage(V)

I C =60 A

T C =25

o C

V GE , Gate-Emitter Voltage(V)

T C = 150

o C

100

1000

100

1000

10000

V CE , Collector-Emitter Voltage(V)

Safe Operating Area

V GE =15V

T C =125

o C

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.4

0.8

1.2

1.6

2.4

V F , Forward Voltage (V)

T j =25

o C

T j =150

o C

I C =30 A

I C =15 A

I C =60 A

I C =30 A

I C =15 A

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