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IXFK32N100Q3 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças IXFK32N100Q3
Descrição Electrónicos  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFK32N100Q3 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXFK32N100Q3 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXFK32N100Q3 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXFK32N100Q3 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc N-Channel MOSFET Transistor
IXFK32N100Q3
www.iscsemi.com
1
FEATURES
· Drain Current -ID= 32A@ TC=25℃
· Drain Source Voltage -VDSS=1000V(Min)
· Drain-Source Saturation Voltage
-RDS(on) = 320mΩ(Max)@VGS= 10V, ID= 16A
APPLICATION
· DC-DC Converters
· Battery Chargers
· DC Choppers
· Temperature and Lighting Controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1000
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
32
A
IDM
Pulsed Drain Current
96
A
EAS
Single Pulse Avalanche Energy
2
J
dv/dt
Peak Diode Recovery dv/dt
50
V/ns
PD
Total Dissipation
1250
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.1
℃
/W


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