isc Silicon NPN Transistor

2SC5103

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

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SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

BVCBO

Collector-base breakdown voltage

IC=50uA

100

--

V

BVCEO

Collector-emitter breakdown voltage

IC=1mA

60

--

V

BVEBO

Emitter-base breakdown voltage

IE=50uA

5

--

V

ICBO

Collector cutoff current

VCB=100V

--

10

uA

IEBO

Emitter cutoff current

VEB=5V

--

10

uA

VCE(sat)

Collector-emitter saturation voltage

IC=3A,IB=0.15

--

0.3

V

IC=4A,IB=0.2A

--

0.5

V

VBE(sat)

Base-emitter saturation voltage

IC=3A,IB=0.15

--

1.2

V

IC=4A,IB=0.2A

--

1.5

V

hFE

DC current transfer ratio

VCE=2V,IC=1A

82

270

--