UPC802

R03DS0096EJ0100 Rev.1.00

Page 3 of 8

Mar.14.25

ELECTRICAL CHARACTERISTICS (TA = 25 °C, V ± = ±15 V)

Parameter

Symbol

ISET = 1µA

ISET = 10µA

Unit

Test Condition

MIN.

MAX.

MIN.

MAX.

Input Offset Voltage

VIO

±5

±6

mV

RS ≤ 100 kΩ

±5

±6

V± = ±1.5V, RS ≤ 100 kΩ

Input Offset Current

IIO

±6

±20

nA

Input Bias Current Note6

IB

10

75

nA

10

75

V± = ±1.5V

Large Signal Voltage

Gain

AV

60000

VO = ±10 V, RL = 100 kΩ

Large Signal Voltage

Gain

AV

60000

VO = ±10 V, RL = 10 kΩ

Supply Current

ICC

11

100

μA

8

90

V± = ±1.5V

Power Consumption

Pd

330

3000

μW

24

270

V± = ±1.5V

Common Mode Rejection

Ratio

CMR

70

70

dB

RS ≤ 10 kΩ

Supply Voltage Rejection

Ratio

SVR

74

74

dB

RS ≤ 10 kΩ

Output Voltage Swing

Vom

±12

V

RL = 100 kΩ

±0.6

V± = ±1.5V, RL = 100 kΩ

Output Voltage Swing

Vom

±12

V

RL = 10 kΩ

±0.6

V± = ±1.5V, RL = 10 kΩ

Common Model Input

Voltage Range

VICM

±13.5

±13.5

V

±0.6

±0.6

V± = ±1.5V

【

Note】6. The direction of the input bias current is the same direction that flows out from the IC because the first stage

is composed of PNP transistor.

Examples of Applied Circuits

x10 Amplifier