M58BF008 datasheet(17/36 Pages) STMICROELECTRONICS

Nome de Peças	M58BF008

Descrição Electrónicos	8 Mbit 256Kb x32, Burst Flash Memory

PDF	36 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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M58BF008

Table 16. Asynchronous Read AC Characteristics (1)

(TA = –40 to 125°C; VDD =5V ± 10% and VDDQ = 3.3V ± 0.3V)

Note: 1. See AC Testing Measurements Conditions for timing measurements.

2. Sampled only, not 100% tested.

3. G may be delayed up to tELQV-tGLQV after falling edge of E without increasing tELQV.

Symbol

Alt

Parameter

Min

Max

Unit

tAVAV

tRC

Address Valid to Next Address Valid

100

tAVQV

tACC

Address Valid to Output Valid

100

tAXQX

(2)

tOH

Address Transition to Output Transition

tEHQX

(2)

tOH

Chip Enable High to Output Transition

tELQV

(2, 3)

tCE

Chip Enable Low to Output Valid

100

tELQX

(2)

tLZ

Chip Enable Low to Output Transition

tEXQZ

(2)

tHZ

Chip Enable High to Output Hi-Z

tGHQX

(2)

tOH

Output Enable High to Output Transition

tGHQZ

(2)

tDF

Output Enable High to Output Hi-Z

tGLQV

(2)

tOE

Output Enable Low to Output Valid

tGLQX

tOLZ

Output Enable Low to Output Transition

Figure 6. Asynchronous Read AC Waveforms

AI03571

A12-A29

DQ0-DQ31

VALID

E, LBA

tGLQX

tAVAV

tGLQV

tGHQZ

tGHQX

tAVQV

tELQV

tELQX

tEHQX

tEHQZ

tPHQV

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