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50MT060ULSA Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças 50MT060ULSA
Descrição Electrónicos  Ultrafast Speed IGBT
PDF  10 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

50MT060ULSA Folha de dados(HTML) 2 Page - International Rectifier

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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
2
www.irf.com
Qg
Total Gate Charge (turn-on)
370
555
nC
IC = 100A
Qge
Gate-Emitter Charge (turn-on)
64
96
VCC = 480V
Qgc
Gate-Collector Charge (turn-on)
163
245
VGE = 15V
Eon
Turn-On Switching Loss
0.7
1.2
mJ
IC = 50A, VCC = 480V, VGE = 15V,
Eoff
Turn-Off Switching Loss
1.7
2.6
Rg = 5Ω
Ets
Total Switching Loss
2.4
3.8
Eon
Turn-On Switching Loss
1.1
1.7
mJ
IC = 50A, VCC = 480V, VGE = 15V
Eoff
Turn-Off Switching Loss
2.5
3.8
Rg = 5Ω, TJ = 125°C
Ets
Total Switching Loss
3.6
5.5
Energy losses include tail and diode reverse
recovery
Cies
Input Capacitance
9800 14700
VGE = 0V
Coes
Output Capacitance
602
903
pF
VCC = 30V
Cres
Reverse Transfer Capacitance
121
182
f = 1.0 MHz
Ct
Diode Junction Capacitance
118
177
Vr = 600V, f = 1.0 MHz
trr
Diode Reverse Recovery Time
99
150
ns
VCC = 480V, IC = 50A
Irr
Diode Peak Reverse Current
6.5
9.8
A
di/dt = 200A/µs
Qrr
Diode Recovery Charge
320
735
nC
Rg = 5Ω
di(rec)M/dt Diode PeakRate of Fall of Recovery
236
A/µs
During t
b
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
VGE = 0V, IC = 250µA
VCE(on)
Collector-to-Emitter Voltage
1.69
2.31
VGE = 15V, IC = 50A
1.96
2.55
VGE = 15V, IC = 100A
1.88
2.24
VGE = 15V, IC = 100A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3
6
IC = 0.5mA
BVR
Diode Reverse Breakdown Voltage
600
IR = 200µA
∆VGE(th)/ Temperature Coeff. of
- 13
mV/°C VCE = VGE, IC = 500µA
∆TJ
Threshold Voltage
gfe
Forward Transconductance
22
29
S
VCE = 50V, IC = 100A
ICES
Collector-to-Emiter Leaking Current
0.25
mA
VGE = 0V, VCE = 600V
6VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
1.64
1.82
V
IF = 100A, VGE = 0V
1.56
1.74
IF = 100A, VGE = 0V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
± 250
nA
VGE = ± 20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ
Max Units Test Conditions
Energy losses include tail and diode reverse
recovery



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