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On-State Current
0.8 Amp
FS01...A/B
SENSITIVE GATE SCR
This series of Silicon Controlled R ectifiers
uses a high performance
PNPN technology.
This part is intended for general purpose
applications where high gate sensitivity is
required.
Feb - 01
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
IT(RMS)
PARAMETER
CONDITIONS
Min.
Max.
Unit
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 600 V
SYMBOL
IT(AV)
ITSM
ITSM
I2t
VGRM
IGM
PGM
PG(AV)
Tj
Tstg
Tsld
All Conduction Angle, TL = 60 ºC
Half Cycle,
Θ = 180 º, T
L = 60 ºC
Half Cycle, 60 Hz, Tj = 25 ºC
Half Cycle, 50 Hz, Tj = 25º C
t = 10ms, Half Cycle
IGR = 10 µA
20 µs max.
20 µs max.
20ms max.
1.6 mm from case, 10s max.
0.8
0.5
8
7
0.24
8
-40
-40
A
A
A
A
A2s
V
A
W
W
ºC
ºC
ºC
1
2
0.1
+125
+150
260
Repetitive Peak Off State
Voltage
PARAMETER
CONDITIONS
VOLTAGE
Unit
SYMBOL
VDRM
VRRM
Tj = -40 to +125 ºC, RGK = 1 K
Ω
V
B
200
D
400
G
G
K
TO92
(Plastic)
RD26
(Plastic)
FS01...A
FS01...B
A
K
A
M
600
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