STPS61170CW datasheet(2/5 Pages) STMICROELECTRONICS

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STPS61170C

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Table 4: Thermal Parameters

Table 5: Static Electrical Characteristics (per diode)

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.0043 IF

(RMS)

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

Total

0.9

0.6

°C/W

Rth(c)

Coupling

0.3

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Symbol

Parameter

Tests conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

VF **

Forward voltage drop

Tj = 25 °C

IF = 30 A

0.84

Tj = 125 °C

IF = 30 A

0.63

0.67

Tj = 25 °C

IF = 60 A

0.92

Tj = 125 °C

IF = 60 A

0.76

0.80

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus

ambient temperature (

δ = 0.5, per diode)

Figure

Normalized

avalanche

power

derating versus pulse duration

Figure

Normalized

avalanche

power

derating versus junction temperature

F(AV)(W)

d=0.05

d=0.1

d=0.2

d=0.5

d=1

d=t /T

IF(AV)(A)

100

125

150

175

F(AV)(A)

th(j-a)=15°C/W

d=t /T

th(j-a)=Rth(j-c)

Tamb(°C)

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

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