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M48Z129V Folha de dados(PDF) 6 Page - STMicroelectronics

Nome de Peças M48Z129V
Descrição Electrónicos  3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM
PDF  13 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48Z129V Folha de dados(HTML) 6 Page - STMicroelectronics

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M48Z129Y, M48Z129V
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Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70 °C)
Note: 1. All voltages referenced to VSS.
2. At 25 °C.
Table 8. Power Down/Up AC Characteristics
(TA = 0 to 70 °C)
Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-
es VPFD (min).
2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
Symbol
Parameter
Min
Typ
Max
Unit
VPFD
Power-fail Deselect Voltage (M48Z129Y)
4.2
4.35
4.5
V
Power-fail Deselect Voltage (M48Z129V)
2.7
2.9
3.0
VSO
Battery Back-up Switchover Voltage (M48Z129Y)
3.0
V
Battery Back-up Switchover Voltage (M48Z129V)
2.45
tDR
(2)
Expected Data Retention Time
10
YEARS
Symbol
Parameter
Min
Max
Unit
tF
(1)
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
tFB
(2)
VPFD (min) to VSS VCC Fall Time (M48Z129Y)
10
µs
VPFD (min) to VSS VCC Fall Time (M48Z129V)
150
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
µs
tRB
VSS to VPFD (min) VCC Rise Time
1µs
tWPT
Write Protect Time (M48Z129Y)
40
150
µs
Write Protect Time (M48Z129V)
40
250
tREC
VPFD (max) to RST High
40
200
ms



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