DMTH4008LFDFW

Datasheet number: DS40056 Rev. 1 - 2

2 of 7

www.diodes.com

January 2018

© Diodes Incorporated

DMTH4008LFDFW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 7) VGS = 10V

TA = +25°C

TA = +100°C

ID

11.6

8.2

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

80

A

Continuous Source-Drain Diode Current (Note 7)

IS

2.55

A

Pulsed Source-Drain Diode Current (10

μs Pulse, Duty Cycle = 1%)

ISM

80

A

Avalanche Current, L = 0.3mH (Note 8)

IAS

14.7

A

Avalanche Energy, L = 0.3mH (Note 8)

EAS

32.4

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

0.99

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

153

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.35

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

64.5

°C/W

Thermal Resistance, Junction to Case (Note 7)

TC = +25°C

RθJC

14.8

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

40

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 32V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

1

1.7

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

9.1

11.5

m

Ω

VGS = 10V, ID = 10A

12.9

18

VGS = 4.5V, ID = 8.5A

Diode Forward Voltage

VSD

—

0.8

1.0

V

VGS = 0V, IS = 10A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss

—

1030

—

pF

VDS = 20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

324

—

Reverse Transfer Capacitance

Crss

—

27

—

Gate Resistance

Rg

—

1.82

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

6.8

—

nC

VDD = 20V, ID = 10A

Total Gate Charge (VGS = 10V)

Qg

—

14.2

—

Gate-Source Charge

Qgs

—

2.0

—

Gate-Drain Charge

Qgd

—

2.7

—

Turn-On Delay Time

tD(ON)

—

3.1

—

ns

VDD = 20V, VGS = 10V,

Rg = 6Ω, ID = 10A

Turn-On Rise Time

tR

—

3.1

—

Turn-Off Delay Time

tD(OFF)

—

14.2

—

Turn-Off Fall Time

tF

—

5.8

—

Reverse Recovery Time

tRR

—

19.6

—

ns

IF = 10A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

8.2

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ =+ 25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.