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STGF30H65DFB2 Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STGF30H65DFB2
Descrição Electrónicos  Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220FP package
PDF  15 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF30H65DFB2 Folha de dados(HTML) 2 Page - STMicroelectronics

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Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
650
V
IC(1)
Continuous collector current at TC = 25 °C
50
A
Continuous collector current at TC = 100 °C
30
A
ICP(2)(3)
Pulsed collector current
90
A
VGE
Gate-emitter voltage
±20
V
Transient gate-emitter voltage (tp ≤ 10 μs)
±30
IF(1)
Continuous forward current at TC = 25 °C
41
A
Continuous forward current at TC = 100 °C
24
IFP(2)(3)
Pulsed forward current
90
A
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1s, TC = 25°C)
2.5
kV
PTOT
Total power dissipation at TC = 25 °C
50
W
Tstg
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 175
°C
1. Limited by maximum junction temperature.
2. Pulse width is limited by maximum junction temperature.
3. Defined by design, not subject to production test.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
3
°C/W
Thermal resistance junction-case diode
5.8
RthJA
Thermal resistance junction-ambient
62.5
STGF30H65DFB2
Electrical ratings
DS13256 - Rev 2
page 2/15



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