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AP200N11P Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP200N11P
Descrição Electrónicos  110V N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP200N11P Folha de dados(HTML) 1 Page - A POWER MICROELECTRONICS

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AP200N11PIT
110V N-Channel Enhancement Mode MOSFET
AP200N10P/T REV1.0
永源微電子科技有限公司
Description
The AP200N11P/T uses advanced APM-SGTⅠ technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection or
in other Switching application.
General Features
VDS = 110V ID =200A
RDS(ON) < 3.8mΩ @ VGS=10V (Type：3.1mΩ)
Application
Isolated DC
Motor control
Synchronous-rectification
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP200N11P
TO-220-3L
AP200N11P XXXYYYY
1000
AP200N11T
TO-263-3L
AP200N11T XXXYYYY
800
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
110
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current1
200
A
ID@TA=70℃
Continuous Drain Current1
146
A
IDM
Pulsed Drain Current2
788
A
EAS
Single Pulse Avalanche Energy3
894
mJ
IAS
Avalanche Current
56
A
PD@TA=25℃
Total Power Dissipation4
277
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
40
℃/W
RθJC
Thermal Resistance Junction-Case1
0.70
℃/W


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