AP150N06P datasheet(1/8 Pages) APME

Nome de Peças	AP150N06P

Descrição Electrónicos	60V N-Channel Enhancement Mode MOSFET

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Fabricante Electrônico	APME [A POWER MICROELECTRONICS]

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AP150N06PIT

60V N-Channel Enhancement Mode MOSFET

AP150N06P/T RVE1.0

永源微電子科技有限公司

Description

The AP150N06P/T uses advanced APM-SGT II technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =150A

RDS(ON) < 6.0mΩ @ VGS=10V （Type：4.2mΩ）

Application

Battery protection

UPS

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP150N06P

TO-220-3L

AP150N06P XXX YYYY

1000

AP150N06T

TO-263-3L

AP150N06T XXX YYYY

800

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

150

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

85

A

IDM

Pulsed drain current2)

450

A

EAS

Single pulsed avalanche energy)

265

mJ

PD@TC=25

℃

Total Power Dissipation4

87

W

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

1.44

℃/W

RθJA

Thermal resistance, junction-ambient4)

62

℃/W

Nº de peça semelhante - AP150N06P

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A POWER MICROELECTRONIC...	AP150N06BD	824Kb / 7P	65V N-Channel Enhancement Mode MOSFET REV1.0
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	AP150N06HF	855Kb / 9P	60V N-Channel Enhancement Mode MOSFET
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	AP150N06HP	855Kb / 9P	60V N-Channel Enhancement Mode MOSFET

More results

Descrição semelhante - AP150N06P

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Zetex Semiconductors	ZXMN6A07F	1Mb / 7P	60V N-CHANNEL ENHANCEMENT MODE MOSFET
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Pan Jit International I...	PJP6000	127Kb / 4P	60V N-Channel Enhancement Mode MOSFET
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More results

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