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AP150N04HT Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP150N04HT
Descrição Electrónicos  40V N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP150N04HPIT
40V N-Channel Enhancement Mode MOSFET
AP150N04HP/T REV1.1
永源微電子科技有限公司
Description
The AP150N04HP/T uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =150A
RDS(ON) < 4.0mΩ @ VGS=10V (Type：3.2mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP150N04HP
TO-220-3L
AP150N04HP XXX YYYY
1000
AP150N04HT
TO-263-3L
AP150N04HT XXX YYYY
800
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
150
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
102
A
IDM
Pulsed Drain Current2
576
A
EAS
Single Pulse Avalanche Energy3
576
mJ
IAS
Avalanche Current
40
A
PD@TC=25
℃
Total Power Dissipation4
57
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient (Steady State)1
62
℃/W
RθJC
Thermal Resistance Junction-Case1
1.3
℃/W


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