AP70P02DF datasheet(1/7 Pages) APME

Nome de Peças	AP70P02DF

Descrição Electrónicos	-20V P-Channel Enhancement Mode MOSFET

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Fabricante Electrônico	APME [A POWER MICROELECTRONICS]

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AP70P02DF

-20V P-Channel Enhancement Mode MOSFET

AP70P02DF REV1.0

永源微電子科技有限公司

Description

The AP70P02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -20V ID =-70A

RDS(ON) < 5.5mΩ @ VGS=4.5V (Type：4.8mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP70P02DF

PDFN3*3-8L

AP70P02DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ -4.5V1

-70

A

ID@TC=70℃

Continuous Drain Current, VGS @ -4.5V1

-50

A

IDM

Pulsed Drain Current2

-280

A

PD@TC=25℃

Total Power Dissipation3

2.5

W

PD@TC=70℃

Total Power Dissipation3

1.6

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance Junction-Case1

2.1

℃/W

Nº de peça semelhante - AP70P02DF

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A POWER MICROELECTRONIC...	AP70P02NF	1Mb / 7P	-20V P-Channel Enhancement Mode MOSFET

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Diodes Incorporated	DMP21D0UT	170Kb / 7P	20V P-CHANNEL ENHANCEMENT MODE MOSFET Rev 2
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