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AP70N30CF Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP70N30CF
Descrição Electrónicos  300V N-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP70N30CF Folha de dados(HTML) 1 Page - A POWER MICROELECTRONICS

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AP70N30CFIPIT
300V N-Channel Enhancement Mode MOSFET
AP70N30CF/P/T RVE1.0
永源微電子科技有限公司
Description
The AP70N30CF is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 300V ID =70A
RDS(ON) < 65mΩ @ VGS=10V （Type：55mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP70N30CF
TO-220F-3L
AP70N30C F XXX YYYY
1000
AP70N30CP
TO-220-3L
AP70N30C P XXX YYYY
1000
AP70N30CT
TO-263-3L
AP70N30C T XXX YYYY
800
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
300
V
ID
Continuous Drain Current
70
A
IDM
Pulsed Drain Current
210
A
VGSS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
1350
mJ
IAS
Avalanche Current
17
A
EAR
Repetitive Avalanche Energy
525
mJ
PD
Power Dissipation (TC = 25ºC)
250
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
0.5
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
40
ºC/W


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