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AP50H04NF Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP50H04NF
Descrição Electrónicos  40V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP50H04NF Folha de dados(HTML) 1 Page - A POWER MICROELECTRONICS

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AP50H04NF
40V N+N-Channel Enhancement Mode MOSFET
AP50H04NF REV1.0
永源微電子科技有限公司
Description
The AP50H04NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =50A
RDS(ON) < 8.0mΩ @ VGS=10V （Type：6.5mΩ）
Application
BLDC
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50H04NF
PDFN5*6-8L
AP50H04NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
50
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
39
A
IDM
Pulsed Drain Current2
240
A
EAS
Single Pulse Avalanche Energy3
181
mJ
IAS
Avalanche Current
20
A
PD@TC=25℃
Total Power Dissipation4
46
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient (Steady State)1
25
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.7
℃
/W


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