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AP50H02DF3 Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP50H02DF3
Descrição Electrónicos  20V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP50H02DF3
20V N+N-Channel Enhancement Mode MOSFET
AP50H02DF3 REV1.0
永源微電子科技有限公司
Description
The AP50H02DF3 uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =50A
RDS(ON) < 8.5mΩ @ VGS=4.5V （Type：6.2mΩ）
Application
3.3V MCU Drive
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50H02DF3
DFN3*3-8L
AP50H02DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID@TA=25℃
Continuous Drain Current, VGS @ 4.5V
50
A
ID@TA=70℃
Continuous Drain Current, VGS @ 4.5V
30
A
IDM
Pulsed Drain Current note1
120
A
EAS
Single Pulsed Avalanche Energy note2
147.6
mJ
PD@TA=25℃
Power Dissipation
37
W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃/W
RθJC
Thermal Resistance, Junction to Case
2
℃
/W


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