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AP50G03GD Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP50G03GD
Descrição Electrónicos  30V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP50G03GD Folha de dados(HTML) 1 Page - A POWER MICROELECTRONICS

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AP50G03GD
30V N+P-Channel Enhancement Mode MOSFET
AP50G03GD RVE1.0
永源微電子科技有限公司
Description
The AP50G03GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =52A
RDS(ON) < 10mΩ @ VGS=10V （Type：7.2mΩ）
VDS = -30V ID =-48A
RDS(ON) < 13mΩ @ VGS=-10V （Type：8.8mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50G03GD
TO-252-4L
AP50G03GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
52
-48
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
38.5
-37.5
A
IDM
Pulsed Drain Current2
150
-144
A
EAS
Single Pulse Avalanche Energy3
289
378
mJ
IAS
Avalanche Current
28
29.5
A
PD@TC=25℃
Total Power Dissipation4
46
41.3
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.3
℃
/W


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