AP40H03DF2 datasheet(1/7 Pages) APME

Nome de Peças	AP40H03DF2

Descrição Electrónicos	30V NN-Channel Enhancement Mode MOSFET

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Fabricante Electrônico	APME [A POWER MICROELECTRONICS]

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AP40H03DF2

30V N+N-Channel Enhancement Mode MOSFET

AP40H03DF2 REV1.0

永源微電子科技有限公司

Description

The AP40H03DF2 uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=30V ID =40A

RDS(ON) < 10mΩ @ VGS=10V

（Type：7.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40H03DF2

DFN3*3B-8L

AP40N03DF2 XXXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

40

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

23

A

IDM

Pulsed Drain Current2

120

A

PD@TC=25

℃

Total Power Dissipation

137.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance Junction-Case1

4

℃/W

Nº de peça semelhante - AP40H03DF2

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A POWER MICROELECTRONIC...	AP40H03NF	841Kb / 7P	30V NN-Channel Enhancement Mode MOSFET REV1.0

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AP40H03DF2 Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

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