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AP30G04GD Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP30G04GD
Descrição Electrónicos  40V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP30G04GD
40V N+P-Channel Enhancement Mode MOSFET
AP30G04D REV1.0
永源微電子科技有限公司
Description
The AP30G04GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =33A
RDS(ON) < 18mΩ @ VGS=10V （Type：11mΩ）
VDS = -40V ID =-31A
RDS(ON) < 30mΩ @ VGS=10V （Type：24mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP30G04GD
TO-252-4L
AP30G04GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Ch
P-Ch
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
33
-31
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
23.1
-21.7
A
IDM
Pulsed Drain Current2
99
-93
A
EAS
Single Pulse Avalanche Energy3
528
495
mJ
IAS
Avalanche Current
26
28
A
PD@TC=25℃
Total Power Dissipation4
25
31.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
1.5
℃
/W


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