AP28N50FIPIT

500V N-Channel Enhancement Mode MOSFET

AP28N50F/P/T RVE1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=4.1Mh IAS=18A, VDD=50V, RG=25Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 μA

500

V

ΔBVDSS / ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 μA,

0.51

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

1

μA

VDS = 400 V, TC = 125°

C

10

μA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

-100

nA

VGS(TH)

Gate Threshold Voltage

VDS=VGS, ID =250 uA

2.0

3.0

5.0

V

RDS(On)

Drain-Source On-state Resistance

VGS=10 V, ID =10 A, TJ = 25°C

195

260

mΩ

gFS

Forward Transconductance

VDS = 40 V, ID = 10 A (Note 4)

19

S

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V, f = 1.0

MHz

2340

pF

Coss

Output Capacitance

339

pF

Crss

Reverse Transfer Capacitance

7.7

pF

td(on)

Turn On Delay Time

VDD = 250 V, ID = 20 A,

RG = 25 Ω

(Note 4, 5)

36

ns

tr

Rising Time

50

ns

td(off)

Turn Off Delay Time

95

ns

tf

Fall Time

44

ns

Qg

Total Gate Charge

VDS = 250 V, ID = 20 A,

VGS = 10 V

(Note 4, 5)

40

nC

Qgs

Gate-Source Charge

13

nC

Qgd

Gate-Drain Charge

12

nC

ISM

Maximum Pulsed Drain-Source Diode Forward Current

80

A

VSD

Diode Forward Voltage

VGS= 0 V, IS = 20 A

1.4

V

trr

Reverse Recovery Time

VGS = 0 V, IS = 20 A, dIF / dt =

100 A/μs Note 4)

345

ns

Qrr

Reverse Recovery Charge

4.6

μC