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AP28N50MP Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP28N50MP
Descrição Electrónicos  500V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP28N50MP
500V N-Channel Enhancement Mode MOSFET
AP28N50MP RVE1.0
永源微電子科技有限公司
Description
The AP28N50MP is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 500V ID =28A
RDS(ON) < 200mΩ @ VGS=10V （Type：170mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP28N50MP
TO-247-3L
AP28N50MP XXX YYYY
300
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
500
V
ID
Continuous Drain Current
20
A
IDM
Pulsed Drain Current
(note1)
72
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy (note2)
662
mJ
IAR
Avalanche Current (note1)
18
A
EAR
Repetitive Avalanche Energy note1)
70
mJ
PD
Power Dissipation (TC = 25ºC)
34
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
3.68
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
62.5
ºC/W


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