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AP25G10NF Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP25G10NF
Descrição Electrónicos  100V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP25G10NF
100V N+P-Channel Enhancement Mode MOSFET
AP25G10NF RVE1.0
永源微電子科技有限公司
Description
The AP25G10NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS =100V ID =25A
RDS(ON) < 100mΩ @ VGS=10V （Type：72mΩ）
VDS = -100V ID =-23.8A
RDS(ON) < 100mΩ @ VGS=-10V （Type：85mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP25G10NF
PDFN5*6-8L
AP25G10NF XXX YYYY
50
00
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
100
-100
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
25
-23.8
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
15.9
-14.5
A
IDM
Pulsed Drain Current2
78.5
-68.4
A
EAS
Single Pulse Avalanche Energy3
128
147.2
mJ
IAS
Avalanche Current
17
16
A
PD@TC=25℃
Total Power Dissipation4
23
21.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
25
℃
/W
RθJC
Thermal Resistance Junction-Case1
5.4
℃
/W


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