AP24N50MP

500V N-Channel Enhancement Mode MOSFET

AP24N50MP RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

500

530

--

V

IDSS

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V, TJ = 25ºC

--

--

1

μA

IGSS

Gate-Source Leakage

VGS = ±30V

--

--

±100

nA

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = 250µA

2.0

3.2

5.0

V

RDS(on)

Drain-Source On-Resistance (Note3)

VGS = 10V, ID = 9A

--

215

280

mΩ

Ciss

Input Capacitance

VGS = 0V,

VDS = 25V, f = 1.0MHz

--

2219

--

pF

Coss

Output Capacitance

--

321

--

Crss

Reverse Transfer Capacitance

--

6.6

--

Qg

Total Gate Charge

VDS = 250V, ID=18A,

VGS = 10 V

--

38

--

nC

Qgs

Gate-Source Charge

--

12

--

Qgd

Gate-Drain Charge

--

13

--

td(on)

Turn-on Delay Time

VDD = 250 V, ID = 18 A,

RG = 25 Ω

--

34

--

ns

tr

Turn-on Rise Time

--

46

--

td(off)

Turn-off Delay Time

--

89

--

tf

Turn-off Fall Time

--

41

--

IS

Continuous Body Diode Current

TC = 25 ºC

--

--

18

A

ISM

Pulsed Diode Forward Current

--

--

72

VSD

Body Diode Voltage

TJ = 25ºC, ISD = 18A, VGS = 0V

--

--

1.4

V

trr

Reverse Recovery Time

VGS = 0V,IS = 18A, diF/dt =100A

/μs

--

337

--

ns

Qrr

Reverse Recovery Charge

--

4.3

--

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=4.1Mh IAS=18A, VDD=50V, RG=25Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.