AP24N50LP

500V N-Channel Enhancement Mode MOSFET

AP24N50LP REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 250mA, VGS = 0V

500

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V

-

-

1.0

mA

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±30V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250mA

2.0

3.0

4.0

V

RDS(ON)

Static Drain-Source ON-Resistance(4)

VGS = 10V, ID = 9A

-

220

280

mΩ

Ciss

Input Capacitance

VGS = 0V, VDS = 25V,

f = 1MHz

-

3415

-

pF

Coss

Output Capacitance

-

305

-

pF

Crss

Reverse Transfer Capacitance

-

32

-

pF

Qg

Total Gate Charge

VGS = 0 to 10V

VDS = 250V, ID = 24A

-

69

-

nC

Qgs

Gate Source Charge

-

19.2

-

nC

Qgd

Gate Drain("Miller") Charge

-

21.8

-

nC

td(on)

Turn-On DelayTime

VGS = 10V, VDD = 250V

ID= 24A, RGEN = 24Ω

-

48

-

ns

tr

Turn-On Rise Time

-

68

-

ns

td(off)

Turn-Off DelayTime

-

197

-

ns

tf

Turn-Off Fall Time

-

79

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

24

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

100

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = 24A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF = 24A, di/dt = 100A/us

-

475

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

6.8

-

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . VDD =50V, VG =10V, ,L=10mH, IAS =18A, Starting TJ=25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.