AP20H03DF datasheet(1/7 Pages) APME

Nome de Peças	AP20H03DF

Descrição Electrónicos	30V N-Channel Enhancement Mode MOSFET

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Fabricante Electrônico	APME [A POWER MICROELECTRONICS]

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AP20H03DF

30V N-Channel Enhancement Mode MOSFET

AP20H03DF REV1.0

永源微電子科技有限公司

Description

The AP20H03DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =20A

RDS(ON) < 20mΩ @ VGS=10V （Type：15mΩ）

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP20H03DF

PDFN3*3-8L

AP20H03DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±

20

V

ID@TA=25℃

Continuous Drain Current

20

A

ID@TA=70℃

Continuous Drain Current

9.9

A

IDM

Pulsed Drain Current2

60

A

PD@TA=25℃

Total Power Dissipation3

1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

4

℃

/W

Nº de peça semelhante - AP20H03DF

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
A POWER MICROELECTRONIC...	AP20H03NF	1Mb / 6P	30V NN-Channel Enhancement Mode MOSFET
A POWER MICROELECTRONIC...	AP20H03S	807Kb / 7P	30V NN-Channel Enhancement Mode MOSFET REV1.0

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Descrição semelhante - AP20H03DF

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Zetex Semiconductors	ZXMN3A01E6	1Mb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET
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Cystech Electonics Corp...	MTN3K14N3	625Kb / 7P	30V N-CHANNEL Enhancement Mode MOSFET
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Diodes Incorporated	ZXM64N03X	337Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET OCTOBER 2005

More results

AP20H03DF Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

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Nº de peça semelhante - AP20H03DF

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