AP15N10DF datasheet(1/7 Pages) APME

Nome de Peças	AP15N10DF

Descrição Electrónicos	100V N-Channel Enhancement Mode MOSFET

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Fabricante Electrônico	APME [A POWER MICROELECTRONICS]

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AP15N10DF

100V N-Channel Enhancement Mode MOSFET

AP15N10DF REV1.0

永源微電子科技有限公司

Description

The AP15N10DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =15A

RDS(ON) < 100mΩ@ VGS=10V （Type：72mΩ）

Application

Automative lighting

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP15N10DF

PDFN5X6-8L

AP15N10DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Drain Current, VGS @ 10V

15

A

ID@TC=100

℃

Drain Current, VGS @ 10V

7.5

A

IDM

Pulsed Drain Current1

45

A

EAS

Single Pulse Avalanche Energy3

32

mJ

IAS

Avalanche Current

11

A

PD@TC=25

℃

Total Power Dissipation

30

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

62.5

℃/W

RθJC

Maximum Thermal Resistance, Junction-case

5.1

℃/W

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