AP15H10NF datasheet(1/7 Pages) APME

Nome de Peças	AP15H10NF

Descrição Electrónicos	100V NN-Channel Enhancement Mode MOSFET

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Fabricante Electrônico	APME [A POWER MICROELECTRONICS]

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AP15H10NF

100V N+N-Channel Enhancement Mode MOSFET

AP15H10NF REV1.0

永源微電子科技有限公司

Description

The AP15H10NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =18A

RDS(ON) < 85mΩ@ VGS=10V （Type：68mΩ）

Application

LED Dimming

Brush motor

Switch

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP15H10NF

PDFN5*6-8L

AP15H10NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Drain Current, VGS @ 10V

18

A

ID@TC=100℃

Drain Current, VGS @ 10V

12.8

A

IDM

Pulsed Drain Current1

45

A

PD@TC=25℃

Total Power Dissipation

45

W

PD@TA=25℃

Total Power Dissipation3

2.7

W

EAS

Single Pulse Avalanche Energy4

7

mJ

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

25

℃

/W

RθJC

Maximum Thermal Resistance, Junction-case

5.1

℃

/W

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