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AP6G02BLI Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP6G02BLI
Descrição Electrónicos  20V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP6G02BLI
20V N+P-Channel Enhancement Mode MOSFET
AP6G02BLI RVE1.0
永源微電子科技有限公司
Description
The AP6G02BLI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =6.5A
RDS(ON) < 30mΩ @ VGS=4.5V （Type：20mΩ）
VDS = -20V ID =-5.5A
RDS(ON) < 58mΩ @ VGS=-4.5V（Type：46mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP6G02BLI
SOT23-6L
AP6G02BLI
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
20
-20
V
VGS
Gate-Source Voltage
±12
±12
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
6.5
-5.5
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
3.5
-3.1
A
IDM
Pulsed Drain Current2
24
A
EAS
Single Pulse Avalanche Energy3
12
mJ
PD@TA=25℃
Total Power Dissipation4
1.5
W
TSTG
Operating Junction Storage Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
105
℃/W
RθJC
Thermal Resistance Junction-Case1
45
℃/W


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