AP03P35MI datasheet(1/6 Pages) APME

Nome de Peças	AP03P35MI

Descrição Electrónicos	-350V P-Channel Enhancement Mode MOSFET

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Fabricante Electrônico	APME [A POWER MICROELECTRONICS]

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AP03P35MI

-350V P-Channel Enhancement Mode MOSFET

AP3P35MI REV1.0

永源微電子科技有限公司

Description

The AP03P35MI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -350V ID =-0.3A

RDS(ON) < 22Ω @ VGS=10V (Type：13Ω)

Application

Brushless motor

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP03P35MI

SOT-23-3L

03P35M-AP

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-350

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25

℃

Continuous Drain Current, -VGS @ -10V1

-0.3

A

ID@TA=70

℃

Continuous Drain Current, -VGS @ -10V1

-0.12

A

IDM

Pulsed Drain Current2

-0.9

A

EAS

Single Pulse Avalanche Energy3

45.5

mJ

PD@TA=25

℃

Total Power Dissipation4

0.2

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃

/W

RθJC

Thermal Resistance Junction-Case1

250

℃

/W

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