BCP68 datasheet(1/2 Pages) ISC

Nome de Peças	BCP68

Descrição Electrónicos	Silicon NPN Power Transistor

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BCP68

www.iscsemi.com

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DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 20V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): 0.5V(Max) @IC= 1.0A

APPLICATIONS

· Linear Voltage Regulators

· Battery-Driven Devices

· Power Management

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1.5

A

PC

Total Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Nº de peça semelhante - BCP68

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NXP Semiconductors	BCP68	45Kb / 8P	NPN medium power transistor 1999 Apr 08
Zetex Semiconductors	BCP68	43Kb / 1P	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Siemens Semiconductor G...	BCP68	136Kb / 4P	NPN Silicon AF Transistor (For general AF application High collector current High current gain)
Fairchild Semiconductor	BCP68	35Kb / 3P	NPN General Purpose Amplifier
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BCP68 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

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Nº de peça semelhante - BCP68

Descrição semelhante - BCP68

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