GB30RF60K datasheet(5/14 Pages) IRF

Nome de Peças	GB30RF60K

Descrição Electrónicos	IGBT PIM MODULE

PDF	14 Pages

Scroll/Zoom	100%

Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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5 / 14 page

GB30RF60K

Bulletin I27303 01/07

Fig. 8

- Typ. Diode Forward Characteristics

tp = 80μs

Fig. 7

- Typical Gate Charge vs. VGE

ICE = 30A

Fig. 10

- Typ. Switching Time vs. IC

TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω;VGE= 15V

Fig. 9

- Typ. Energy Loss vs. IC

TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω; VGE= 15V

Fig. 12

- Typ. Switching Time vs. RG

TJ = 125°C; L=200μH; VCE= 300V, ICE= 30A; VGE= 15V

Fig. 11

- Typ. Energy Loss vs. RG

TJ = 125°C; L=200μH; VCE= 300V, ICE= 30A; VGE= 15V

Inverter

QG, Total Gate Charge (nC)

100 120

300V

0.5

1.5

Vf (V)

Tj = 25°C

Tj = 125°C

Ic (A)

0.4

0.8

1.2

1.6

ETOT

EON

EOFF

1020

304050

0.01

0.1

Rg (

Ω )

tdOFF

tdON

0.01

0.1

Ic (A)

tdOFF

tdON

Rg (

Ω)

1020304050

0.2

0.4

0.6

0.8

1.2

E (OFF)

E (ON)

E (TOT)

Document Number: 94479

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