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2SD1060 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1060 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Silicon NPN Power Transistor 2SD1060 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.3V(Max) @IC= 3A APPLICATIONS · High−Speed Inverters · Suitable for Relay Drivers · Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse 9 A PC Total Power Dissipation @ Ta=25℃ 1.75 W Total Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.17 ℃ /W 3 2 1 TO-220C Package Pin 1 Base 2 Collector 3 Emitter |
Nº de peça semelhante - 2SD1060 |
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Descrição semelhante - 2SD1060 |
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