2SC3668 datasheet(1/2 Pages) ISC

Nome de Peças	2SC3668

Descrição Electrónicos	Silicon NPN Power Transistor

PDF	2 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC3668

www.iscsemi.com

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DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 50V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): 0.5V(Max) @IC= 1.0A

APPLICATIONS

· Power Amplifier Applications

· Power Switching Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

2

A

IB

Base Current

0.5

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Nº de peça semelhante - 2SC3668

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	2SC3668	203Kb / 4P	NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
	2SC3668	150Kb / 5P	Power Amplifier Applications Power Switching Applications
	2SC3668	150Kb / 5P	Power Amplifier Applications Power Switching Applications

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Descrição semelhante - 2SC3668

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2SC3668 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

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Nº de peça semelhante - 2SC3668

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