LET9002 datasheet(1/4 Pages) STMICROELECTRONICS

Nome de Peças	LET9002

Descrição Electrónicos	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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TARGET DATA

April, 15 2003

LET9002

RF POWER TRANSISTORS

Ldmos Enhanced Technology in Plastic Package

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V

• NEW LEADLESS PLASTIC PACKAGE

• ESD PROTECTION

• SUPPLIED IN TAPE & REEL OF 3K UNITS

DESCRIPTION

The LET9002 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1000

MHz. The LET9002 is designed for high gain and

broadband performance operating in common

source mode at 26 V. LET9002

boasts

the

excellent gain, linearity and reliability of ST’s latest

LDMOS technology mounted in the innovative

leadless SMD plastic package, PowerFLAT™.

It is ideal

for digital cellular BTS applications

requiring high linearity.

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

0.25

A

PDISS

Power Dissipation (@ Tc = 70°C)

4

W

Tj

Max. Operating Junction Temperature

150

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

20

°C/W

ORDER CODE

LET9002

BRANDING

9002

PowerFLAT

™(5x5)

PIN CONNECTION

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STMicroelectronics	LET9006	40Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 15-Apr-2003

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