XP3P080N datasheet(4/8 Pages) YAGEO

Nome de Peças	XP3P080N

Descrição Electrónicos	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	8 Pages

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Fabricante Electrônico	YAGEO [YAGEO Corporation]

Página de início	http://www.yageo.com

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4 / 8 page

XP3P080N

65mΩ

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Drain Current v.s. Ambient

Fig 12. Transfer Characteristics

Temperature

468

Q G , Total Gate Charge (nC)

I D = -3A

V DS = -15V

0.01

0.1

100

0.01

0.1

100

-V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Pulse Width (s)

0.01

0.05

0.1

0.2

Duty Factor=0.5

Single Pulse

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 300℃/W

400

800

1200

1600

13172125

293337

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.02

100

125

150

T A , Ambient Temperature (

o C )

Operation in this area

limited by RDS(ON)

0.4

0.8

1.2

1.6

2.4

-V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS = -5V

T j = -55

o C

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