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L9346PD Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças L9346PD
Descrição Electrónicos  QUAD INTELLIGENT POWER LOW SIDE SWITCH
PDF  13 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9346PD Folha de dados(HTML) 2 Page - STMicroelectronics

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erBCD mixed technology. The device is intended
to drive valves in automotive environment.
The inputs are
µP compatible. Particular care has
been taken to protect the device against failures,
to avoid electromagnetic interferences and to of-
fer extensive real time diagnostic.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Value
Unit
VS
DC Supply Voltage
-2 to 32
V
VSP
Supply Voltage Pulse (duration <200ms)
-2 to 45
V
dVS
dt
Supply Voltage Slope
10
V/
µs
VIN, EN
Input Voltage
 I  10mA
-2 to 16
V
VD
Diagnostic DC Output Voltage
 I  50mA
-0.3 to 16
V
VODC
DC Output Voltage
-0.3 to 45
V
IO1, 2
DC Output Current Out 1, 2
5
A
IO3, 4
DC Output Current Out 3, 4
3
A
IOR1, 2
Reverse Output Current
-5
A
IOR3, 4
Reverse Output Current
-3
A
EO1, 2
Switch-off Energy for Inductive Loads
tEO = 250
µs,1)
50
mJ
EO3, 4
T = 5ms
30
mJ
∆VGND
GND Potential Difference
Tj = -40 to 150
°C
±0.3
V
TjEO
Juntion Temperature During Switch-off
∑t ≤ 30 min
175
°C
∑t ≤ 15 min
190
°C
Tj
Juntion Temperature
-40 to TjDIS
°C
Tstg
Storage Temperature
-55 to 150
°C
TjDIS
Thermal Disable Junction Temp. Threshold
180 to 210
°C
The device is ESD protected, tested according to MIL883C with
±2KV.
Note
1) :tEO is the clamping time (see fig.1)
PG N D
OU T 1
D1
IN 4
EN
GN D
IN 3
D2
OU T 2
PG N D
PG N D
PG N D
OU T4
D4
IN 1
VS
NC
IN 2
D3
OU T3
H e at s ink c onnec te d to pin s 1, 1 0, 11, 2 0
PIN CONNECTION
DESCRIPTION (continued)
L9346
2/13



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