2SA1797 datasheet(2/5 Pages) GALAXY-MICRO

Nome de Peças	2SA1797

Descrição Electrónicos	PNP Silicon Epitaxial Planar Transistor

PDF	5 Pages

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Fabricante Electrônico	GALAXY-MICRO [CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.]

Página de início	https://www.gmesemi.com/en/

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Production specification

PNP Silicon Epitaxial Planar Transistor

2SA1797

E027

www.gmicroelec.com

Rev.A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-50μA,IE=0

-50

Collector-emitter breakdown voltage V(BR)CEO

IC=-1.0mA,IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO

IE=-50μA,IC=0

-6

Collector cut-off current

ICBO

VCB=-50V,IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V,IC=-500mA

180

120

270

Collector-emitter saturation voltage

VCE(sat)

IC=-1A, IB=-50mA

-0.15 -0.35 V

Transition frequency

VCE=-2V, IE=-500mA

f=100MHz

200

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

CLASSIFICATION OF hFE

Rank

Range

82-180

120-270

Marking

AGP

AGQ

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