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L3100B1 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças L3100B1
Descrição Electrónicos  OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
PDF  8 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L3100B1 Folha de dados(HTML) 1 Page - STMicroelectronics

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Application Specific Discretes
A.S.D.
™
L3100B
L3100B1
DIL 8
OVERVOLTAGE AND OVERCURRENT
PROTECTION FOR TELECOM LINE
UNIDIRECTIONAL FUNCTION
PROGRAMMABLE BREAKDOWN VOLTAGE
UP TO 265 V
PROGRAMMABLE CURRENT LIMITATION
FROM 50 mA TO 550 mA
HIGH SURGE CURRENT CAPABILITY
IPP = 100A
10/1000
µs
FEATURES
Dedicated
to
sensitive
telecom
equipment
protection, this device can provide both voltage
protection and current limitation with a very tight
tolerance.
Its high surge current capability makes the L3100B
a reliable protection device for very exposed
equipment, or when series resistors are very low.
The breakdown voltage can be easily programmed
by using an external zener diode.
A multiple protection mode can also be performed
when using several zener diodes, providing each
line interface with an optimized protection level.
The current limiting function is achieved with the
use of a resistor between the gate N and the
cathode. The value of the resistor will determine
the level of the desired current.
DESCRIPTION
CCITT K17 - K20
10/700
µs
1.5
kV
5/310
µs38
A
VDE 0433
10/700
µs2
kV
5/200
µs50
A
CNET
0.5/700
µs
1.5
kV
0.2/310
µs38
A
COMPLIESWITH THE FOLLOWING STANDARDS :
Gate N
Gate P
Cathode
Anode
SCHEMATIC DIAGRAM
1
2
3
4
5
6
7
8
Gate N
NC
Gate P
Cathode
Anode
Anode
Anode
Anode
CONNECTION DIAGRAM
®
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
September 1998 Ed : 3A
1/8


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