IRF640FP datasheet(1/9 Pages) STMICROELECTRONICS

Nome de Peças	IRF640FP

Descrição Electrónicos	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

1 / 9 page

IRF640

IRF640FP

N - CHANNEL 200V - 0.150

Ω - 18A TO-220/TO-220FP

MESH OVERLAY

™ MOSFET

s

TYPICAL RDS(on) = 0.150

Ω

s

EXTREMELY HIGH dV/dt CAPABILITY

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using he

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

October 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

IRF640

I RF 640F P

VDS

Drain-source Voltage (VGS =0)

200

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC

18

18(**)

A

ID

Drain Current (continuous) at Tc =100

oC

11

11(**)

A

IDM (

•)

Drain Current (pulsed)

72

A

Ptot

T otal Dissipation at Tc =25

oC

125

40

W

Derating Factor

1.0

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

5

V/ns

VISO

Insulation Withstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

(**) Limited only by Maximum Temperature Allowed

TYPE

VDSS

RDS(on)

ID

IRF640

IRF640FP

200 V

<0. 18

Ω

<0. 18

Ω

18 A

1/9

Nº de peça semelhante - IRF640FP

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
First Components Intern...	IRF640FP	231Kb / 5P	IRF640FP 18A 200V N CHANNEL POWER MOSFET

More results

Descrição semelhante - IRF640FP

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	IRF630	104Kb / 9P	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET Feb-1999
	IRF634	333Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET Jul-2001
	IRF640S	84Kb / 8P	N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET Sep-1999
	STP16NS25	330Kb / 9P	N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET May-2002
	STP8NS25	329Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET Apr-2001
	IRF630M	343Kb / 9P	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET Oct-2001
	STB19NF20	535Kb / 16P	N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET 16-Feb-2007
	IRF630	336Kb / 14P	N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET 03-Aug-2006
	IRF630M	326Kb / 14P	N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET 28-Jun-2006
	IRF-634	326Kb / 14P	N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET 28-Jun-2006

More results

IRF640FP Folha de dados(PDF) 1 Page - STMicroelectronics

IRF640FP Folha de dados(HTML) 1 Page - STMicroelectronics

Nº de peça semelhante - IRF640FP

Descrição semelhante - IRF640FP

Html Pages

1 2 3 4 5 6 7 8 9

Folha de dados Download

Ligação URL